Gas sensors created on the basis of wide-gap metal oxide materials (including tin dioxide) make it possible to detect a wide range of gases of organic and inorganic nature. However, the range of materials used to produce them is limited and they are environmentally unsafe. In the development of green semiconductor technologies, the use of new materials and competitive methods for obtaining structures with gas-sensitive properties is of important fundamental and applied interest. In this work, the possibilities of using diamond-graphite film structures obtained in the plasma of a microwave gas discharge of ethanol vapor as gas-sensitive materials are studied. Studies have been carried out on the patterns of electron injection voltage, temperature and air humidity effect on the volt-ampere characteristics and specific surface resistance of diamond-graphite film structures. It was shown that the revealed patterns can be described using the theory of currents limited by space charge in non-crystalline structures with capture traps. It has been established that at the edge of the allowed zone of the electronic structure of the material used there is a band with an increased density of localized electronic states with an energy of about 0.032 eV, which determines the nature of the dependences of the specific surface resistance of the sensor structure on the detection parameters of the gaseous medium. The high efficiency of using diamond-graphite film structures for detecting water vapor has been shown in the form of a more than threefold decrease in their specific surface resistance compared to the absence of water vapor in the atmosphere.
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Key words:
microwave plasma, diamond-graphite films, gas sensors, electronic structure, capture traps, water vapor, electron injection, electrical conductivity
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Published in:
ELECTRONICS MATERIALS
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Bibliography link:
Skripal А. V., Trunilin N. A., Yafarov R. K. Effect of electron injection and temperature on the gas sensitivity to water vapor of diamond-graphite film structures. Proc. Univ. Electronics, 2024, vol. 29, no. 5, pp. 575–584. https://doi.org/10.24151/1561-5405-2024-29-5-575-584. – EDN: AJWYFI.
Alexander V. Skripal
Saratov National Research State University named after N. G. Chernyshevsky, Russia, 410012, Saratov, Astrakhanskaya st., 83
Nikita А. Trunilin
Saratov National Research State University named after N. G. Chernyshevsky, Russia, 410012, Saratov, Astrakhanskaya st., 83
Ravil К. Yafarov
SSU, Russia, 410012, Saratov, Astrakhanskaya st., 83; Saratov branch of the V. A. Kotel’nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences, Russia, 410019, Saratov, Zelenaya st., 38
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